PARAMETER

SYMBOL

UNIT

MBR20100CD

MBR20150CD

MBR20200CD

Device marking code

MBR20100CD

MBR20150CD

MBR20200CD

Repetitive Peak Reverse Voltage

VRRM

0

0

2

0

5

1

0

0

1

V

Average Rectified Output Current @60Hz sine

wave, R-load, Ta=25

IO

A

20

Surge(Non-repetitive)Forward Current @60Hz

half sine-wave, 1 cycle, Ta=25

IFSM

A

130

Current Squared Time @1ms t<8.3ms

Tj=25

I2t

A2s

70

Storage Temperature

Tstg

-55 ~ +175

Junction Temperature

Tj

-55 ~ +175

PARAMETER

SYMBOL UNIT

TEST

CONDITIONS

MBR20100CD

MBR20150CD

MBR20200CD

Maximum instantaneous forward

voltage drop per diode

VFM

V

IFM=10.0A

9

.

0

7

8

.

0

3

8

.

0

Maximum DC reverse current

at rated DC blocking voltage per

diode

IRRM1

mA

VRM=VRRM

Ta=25

0.1

IRRM2

VRM=VRRM

Ta=125

20

Pin 2

Pin 3

Pin 1

Schottky Diodes

MBR20100CD Through MUBR20200CD

TO-252

● High frequency operation

● High purity, high temperature epoxy encapsulation for

enhanced mechanical strength and moisture resistance

● Guard ring for enhanced ruggedness and long term reliability

Typical applications are in switching power supplies, converters,

freewheeling diodes, and reverse battery protection.

● Package: TO-252

Molding compound meets UL 94 V-0 flammability

rating, RoHS-compliant

● Terminals: Tin plated leads, solderable per J-STD-

002 and JESD22-B102

● Polarity: As marked

FEATURES

TYPICAL APPLICATIONS

MECHANICAL DATA

MAXIMUM RATINGS (Ta=25 Unless otherwise specified

ELECTRICAL CHARACTERISTICS

THERMAL CHARACTERISTICS

(Ta=25 Unless otherwise specified

(Ta=25 Unless otherwise specified

PARAMETER

SYMBOL

UNIT

MBR20100CD

MBR20150CD

MBR20200CD

Thermal

Resistance

Between

junction

and case

R J-C

/W

5.0

12-12-2022

Page 1 of 3

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