JC337 datasheet(3/8 Pages) PHILIPS

номер детали	JC337

подробное описание детали	NPN general purpose transistor

PDF	8 Pages

Scroll/Zoom	100%

производитель	PHILIPS [NXP Semiconductors]

домашняя страница	http://www.nxp.com

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3 / 8 page

1999 Apr 27

Philips Semiconductors

Product speciﬁcation

NPN general purpose transistor

JC337

THERMAL CHARACTERISTICS

Note

1. Transistor mounted on an FR4 printed-circuit board.

CHARACTERISTICS

Tj =25 °C unless otherwise speciﬁed.

Note

1. VBE decreases by about 2 mV/K with increasing temperature.

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-a

thermal resistance from junction to ambient

note 1

0.2

K/mW

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

ICBO

collector cut-off current

IE = 0; VCB =20V

−−

100

IE = 0; VCB = 20 V; Tj = 150 °C

−−

µA

IEBO

emitter cut-off current

IC = 0; VEB =5V

−−

100

hFE

DC current gain

IC = 100 mA; VCE =1V

JC337-25

160

−

400

hFE

DC current gain

IC = 500 mA; VCE =1V

−−

VCEsat

collector-emitter saturation voltage IC = 500 mA; IB =50mA

−−

700

VBE

base-emitter voltage

IC = 500 mA; VCE = 1 V; note 1

−−

1.2

collector capacitance

IE =ie = 0; VCB = 10 V; f = 1 MHz

−

transition frequency

IC = 10 mA; VCE = 5 V; f = 100 MHz

100

−−

MHz

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