April 1995

3

Philips Semiconductors

Product specification

P-channel silicon field-effect transistors

J174; J175;

J176; J177

RATINGS

Limiting values in accordance with the Absolute Maximum System (IEC 134)

THERMAL RESISTANCE

STATIC CHARACTERISTICS

Drain-source voltage

± V

DS

max.

30

V

Gate-source voltage

max.

30

V

Gate-drain voltage

max.

30

V

Gate current (DC)

−I

G

max.

50

mA

Total power dissipation

max.

400

mW

Storage temperature range

−65 to +150

°C

Junction temperature

max.

150

°C

From junction to ambient in free air

=

250

K/W

J174

J175

J176 J177

Gate cut-off current

max.

1

1

1

1 nA

Drain cut-off current

−V

max.

1

1

1

1 nA

Drain current

−V

min.

20

7

2

1.5 mA

max.

135

70

35

20 mA

Gate-source breakdown voltage

min.

30

30

30

30 V

Gate-source cut-off voltage

−I

min.

5

3

1

0.8 V

max.

10

6

4

2.25 V

Drain-source ON-resistance

−V

max.

85

125

250

300

Ω