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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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J174 датащи(PDF) 2 Page - NXP Semiconductors |
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J174 датащи(HTML) 2 Page - NXP Semiconductors |
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2 / 6 page  April 1995 2 Philips Semiconductors Product specification P-channel silicon field-effect transistors J174; J175; J176; J177 DESCRIPTION Silicon symmetrical p-channel junction FETs in a plastic TO-92 envelope and intended for application with analog switches, choppers, commutators etc. A special feature is the interchangeability of the drain and source connections. PINNING Note: Drain and source are interchangeable. 1 = source 2 = gate 3 = drain Fig.1 Simplified outline and symbol, TO-92. handbook, halfpage 1 3 2 MAM388 s d g QUICK REFERENCE DATA Drain-source voltage ± VDS max. 30 V Gate-source voltage VGSO max. 30 V Gate current −I G max. 50 mA Total power dissipation up to Tamb =50 °CPtot max. 400 mW J174 J175 J176 J177 Drain current min. max. 20 135 7 70 2 35 1.5 20 mA mA −V DS = 15 V; VGS =0 −IDSS Drain-source ON-resistance −VDS = 0.1 V; VGS =0 RDS on max. 85 125 250 300 Ω |
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