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MA5302MS датащи(PDF) 2 Page - Infineon Technologies AG |
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MA5302MS датащи(HTML) 2 Page - Infineon Technologies AG |
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2 / 60 page ![]() Datasheet 2 of 59 V 2.1 11/2/2023 Integrated Class D Amplifier MA5302MS Description The MA5302MS provides output power that is equivalent to or greater than monolithic alternatives, while occupying 50% less space and requiring little or no heatsink. This is achieved through the integration of a 2- channel PWM controller, a high voltage gate driver, and 4 low RDS(ON) MOSFETs in a multi-chip module (MCM) solution. Similar to its predecessor, the IR43x2M, the MA5302MS includes standard Class D protection features that ensure reliable operation across various environmental conditions. With its small 7x7 mm PG-IQFN-42 package, the MA5302MS represents a powerful upgrade over the IR43x2M and other monolithic alternatives, delivering high power density and the benefits of heatsink-less operation. Topology Half-bridge / Full bridge MA5302MS output power(THD+N=10%) *220 W/ 2 Ω / 440 W in 4 Ω *195 W/ 3 Ω / 390 W in 6 Ω *150 W/ 4 Ω / 300 W in 8 Ω Residual noise (AES-17, IHF-A) *170 μVrms THD+N (1kHz, 75W, 2 Ω, AES-17) *0.01 % *Typical applications |
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