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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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MMST2907A датащи(PDF) 2 Page - Diodes Incorporated |
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MMST2907A датащи(HTML) 2 Page - Diodes Incorporated |
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2 / 4 page  DS30081 Rev. 8 - 2 2 of 4 MMST2907A www.diodes.com Electrical Characteristics @ TA = 25°C unless otherwise specified Characteristic Symbol Min Max Unit Test Condition OFF CHARACTERISTICS (Note 5) Collector-Base Breakdown Voltage V(BR)CBO -60 ¾ V IC = -10 mA, IE = 0 Collector-Emitter Breakdown Voltage V(BR)CEO -60 ¾ V IC = -10mA, IB = 0 Emitter-Base Breakdown Voltage V(BR)EBO -5.0 ¾ V IE = -10 mA, IC = 0 Collector Cutoff Current ICBO ¾ -10 nA mA VCB = -50V, IE = 0 VCB = -50V, IE = 0, TA = 125 °C Collector Cutoff Current ICEX ¾ -50 nA VCE = -30V, VEB(OFF) = -0.5V Base Cutoff Current IBL ¾ -50 nA VCE = -30V, VEB(OFF) = -0.5V ON CHARACTERISTICS (Note 5) DC Current Gain hFE 75 100 100 100 50 ¾ ¾ ¾ 300 ¾ ¾ IC = -100µA, VCE = -10V IC = -1.0mA, VCE = -10V IC = -10mA, VCE = -10V IC = -150mA, VCE = -10V IC = -500mA, VCE = -10V Collector-Emitter Saturation Voltage VCE(SAT) ¾ -0.4 -1.6 V IC = -150mA, IB = -15mA IC = -500mA, IB = -50mA Base-Emitter Saturation Voltage VBE(SAT) ¾ -1.3 -2.6 V IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA SMALL SIGNAL CHARACTERISTICS Output Capacitance Cobo ¾ 8.0 pF VCB = -10V, f = 1.0MHz, IE = 0 Input Capacitance Cibo —30 pF VEB = -2.0V, f = 1.0MHz, IC = 0 Current Gain-Bandwidth Product fT 200 ¾ MHz VCE = -20V, IC = -50mA, f = 100MHz SWITCHING CHARACTERISTICS Turn-On Time ton ¾ 45 ns VCC = -30V, IC = -150mA, IB1 = -15mA Delay Time td ¾ 10 ns Rise Time tr ¾ 40 ns Turn-Off Time toff ¾ 100 ns VCC = -6.0V, IC = -150mA, IB1 = IB2 = -15mA Storage Time ts ¾ 80 ns Fall Time tf ¾ 30 ns Notes: 5. Short duration test pulse used to minimize self-heating effect. |
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