IRFP460 datasheet(1/7 Pages) PHILIPS

номер детали	IRFP460

подробное описание детали	PowerMOS transistors Avalanche energy rated

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производитель	PHILIPS [NXP Semiconductors]

домашняя страница	http://www.nxp.com

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Philips Semiconductors

Product specification

PowerMOS transistors

IRFP460

Avalanche energy rated

FEATURES

SYMBOL

QUICK REFERENCE DATA

• Repetitive Avalanche Rated

• Fast switching

V

DSS = 500 V

• Stable off-state characteristics

• High thermal cycling performance

I

D = 20 A

• Low thermal resistance

R

DS(ON) ≤ 0.27 Ω

GENERAL DESCRIPTION

PINNING

SOT429 (TO247)

N-channel,

enhancement

mode

DESCRIPTION

field-effect

power

transistor,

intended for use in off-line switched

1

gate

mode power supplies, T.V. and

computer monitor power supplies,

2

drain

d.c. to d.c. converters, motor control

circuits

and

general

purpose

3

source

switching applications.

tab

drain

The IRFP460 is supplied in the

SOT429

(TO247)

conventional

leaded package.

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

SYMBOL PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

V

DSS

Drain-source voltage

T

j = 25 ˚C to 150˚C

-

500

V

DGR

Drain-gate voltage

T

j = 25 ˚C to 150˚C; RGS = 20 kΩ

-

500

V

GS

Gate-source voltage

-

± 30

V

I

D

Continuous drain current

T

mb =

25 ˚C; V

GS = 10 V

-

20

A

T

mb = 100 ˚C; VGS = 10 V

-

12.4

A

I

DM

Pulsed drain current

T

mb = 25 ˚C

-

80

A

P

D

Total dissipation

T

mb = 25 ˚C

-

250

W

T

j, Tstg

Operating junction and

- 55

150

˚C

storage temperature range

AVALANCHE ENERGY LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

SYMBOL PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

E

AS

Non-repetitive avalanche

Unclamped inductive load, I

AS = 20 A;

-

1300

mJ

energy

t

p = 0.2 ms; Tj prior to avalanche = 25˚C;

V

DD ≤ 50 V; RGS = 50 Ω; VGS = 10 V

E

AR

Repetitive avalanche energy

1

I

AR = 20 A; tp = 2.5 µs; Tj prior to

-

32

mJ

avalanche = 25˚C; R

GS = 50 Ω; VGS = 10 V

I

AS, IAR

Repetitive and non-repetitive

-

20

A

avalanche current

d

g

s

2

3

1

1 pulse width and repetition rate limited by T

j max.

September 1999

1

Rev 1.000

Аналогичный номер детали - IRFP460

производитель	номер детали	датащи	подробное описание детали
STMicroelectronics	IRFP460	91Kb / 8P	N - CHANNEL 500V - 0.22 ohm - 20 A - TO-247 PowerMESH] MOSFET Sep-1998
Intersil Corporation	IRFP460	55Kb / 7P	20A, 500V, 0.270 Ohm, N-Channel Power MOSFET July 1999
International Rectifier	IRFP460	163Kb / 6P	Power MOSFET(Vdss=500V, Rds(on)=0.27ohm, Id=20A)
IXYS Corporation	IRFP460	77Kb / 4P	MegaMOS - Power MOSFET
Vishay Siliconix	IRFP460	135Kb / 8P	Power MOSFET 28-Jul-08

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