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ISF1060 датащи(PDF) 2 Page - Inchange Semiconductor Company Limited

номер детали ISF1060
подробное описание детали  N-Channel MOSFET
PDF  3 Pages
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производитель  ISC [Inchange Semiconductor Company Limited]
домашняя страница  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

ISF1060 датащи(HTML) 2 Page - Inchange Semiconductor Company Limited

  ISF1060 Datasheet HTML 1Page - Inchange Semiconductor Company Limited ISF1060 Datasheet HTML 2Page - Inchange Semiconductor Company Limited ISF1060 Datasheet HTML 3Page - Inchange Semiconductor Company Limited  
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ISF1060
eq FGH8N100C
N-Channel MOSFET
www.iscsemi.com
2
ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNIT
V(BR)DSS
Drain-Source Breakdown Voltage
VGS= 0; ID= 0.25mA
1000
--
--
V
IDSS
Drain-Source Leakage Current
VDS= 1000V; VGS= 0V;Tj=25℃
VDS= 800V; VGS= 0V; Tj=125℃
--
--
10
100
μ
A
IGSS
Gate-Body Leakage Current
VGS= ±30V;VDS= 0V
--
--
±
100
nA
VGS(th)
Gate Threshold Voltage
VGS= VDS, V; ID=0.25mA
3.0
--
5.0
V
RDS(on)
Drain-Source On-Resistance
VGS= 10V; ID= 4A
--
1.2
1.45
Ω
Ciss
Input Capacitance
VGS = 0V,
VDS = 25V,
f = 1.0MHz
--
2480
--
pF
Coss
Output Capacitance
--
200
--
Crss
Reverse Transfer Capacitance
--
18
--
Qg
Total Gate Charge
VDD = 800V,
ID = 8A,
VGS = 10V
--
55
70
nC
Qgs
Gate-Source Charge
--
13
--
Qgd
Gate-Drain Charge
--
23
--
td(on)
Turn-on Delay Time
VDD = 500V,
ID = 8A,
RG = 25Ω,
--
51
110
ns
tr
Turn-on Rise Time
--
98
200
td(off)
Turn-off Delay Time
--
130
254
tf
Turn-off Fall Time
--
82
170
Drain - Source Body Diode Characteristics
ISD
Continuous Source Current
Tc = 25 ºC
-
-
8.0
A
ISM
Pulsed Source Current
-
-
32.0
VSD
Diode Forward Voltage
IS= 8.0A; VGS= 0V
-
-
1.4
V
trr
Reverse Recovery Time
VGS = 0V,IS = 8A,
diF/dt = 100A /μs
-
620
-
ns
Qrr
Reverse Recovery Charge
-
5.2
-
uC



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