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2SA949 датащи(PDF) 1 Page - Inchange Semiconductor Company Limited

номер детали 2SA949
подробное описание детали  isc Silicon PNP Power Transistor
PDF  2 Pages
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производитель  ISC [Inchange Semiconductor Company Limited]
домашняя страница  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2SA949 датащи(HTML) 1 Page - Inchange Semiconductor Company Limited

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2SA949
isc Silicon PNP Power Transistor
www.iscsemi.com
1
DESCRIPTION
·
Collector-Emitter Breakdown Voltage
-V(BR)CEO=-150V(Min)
·
Collector-Emitter Saturation Voltage
-VCE(sat)= -0.8V(Max) @IC= -10mA
APPLICATIONS
·
Designed for power amplifier,high speed switching and
regulated power supply applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-150
V
VCEO
Collector-Emitter Voltage
-150
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-50
mA
IB
Base Current
-5
mA
PC
Collector Power Dissipation
TC=25℃
800
mW
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150
℃


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