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SIS650S20AS датащи(PDF) 2 Page - Silicon Supplies

номер детали SIS650S20AS
подробное описание детали  650V 20A SiC Schottky Diode
PDF  3 Pages
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производитель  SS [Silicon Supplies]
домашняя страница  https://siliconsupplies.com/
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SIS650S20AS датащи(HTML) 2 Page - Silicon Supplies

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Absolute Maximum Ratings T
J = 25°C unless otherwise stated
PARAMETER
SYMBOL
VALUE
UNIT
Repetitive peak reverse voltage
VRRM
650
V
Surge peak reverse voltage
VRSM
650
V
DC Peak Blocking Voltage
VBR
650
V
Average forward rectified current
IF(AV)
20
A
Repetitive Peak Forward Surge Current
IFRM
105
A
Peak Single-Cycle
Non-Repetitive Surge Current
IFSM
170
A
Operating Junction temperature
TJ
-55 to 175
°C
Storage Temperature Range
TSTG
-65 to 175
°C
650V 20A SiC Schottky Diode – SiS650S20AS
Electrical Characteristics T
J = 25°C unless otherwise stated
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNIT
VF1
VRRM = 650V, IFM = 20A
-
1.45
1.70
Maximum instantaneous
forward voltage
1
VF2
VRRM = 650V, IFM = 20A, TJ = 175°C
-
1.65
2.00
V
VR = 650V
-
1.5
50
Maximum reverse leakage current
1
IRM @ VRM
VR = 650V, TJ = 175°C
-
15
200
µA
Junction Capacitance
CT
VR = 0V, f = 1MHz,
-
1550
-
pF
Reverse Recovery Charge
QC
VR = 400V , IF = 20A, di/dt = 200A/µs
-
96.7
-
nC
Capacitance Stored Energy
EC
VR = 400V
-
23.69
-
µJ
1.
Pulse Width≤ 300µs, Duty Cycle ≤ 2.0%
Rev 1.0
30/10/23
FIGURE 1. Forward Voltage Characteristics
FIGURE 2. Reverse Characteristics
Typical Characteristics T
J = 25°C



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