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LM567 датащи(PDF) 2 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor.
номер детали LM567
подробное описание детали  Tone Decoder
PDF  12 Pages
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производитель  NSC [National Semiconductor (TI)]
домашняя страница  http://www.national.com
Logo NSC - National Semiconductor (TI)

LM567 датащи(HTML) 2 Page - National Semiconductor (TI)

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Absolute Maximum Ratings (Note 1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Supply Voltage Pin
9V
Power Dissipation (Note 2)
1100 mW
V
8
15V
V
3
−10V
V
3
V
4 + 0.5V
Storage Temperature Range
−65˚C to +150˚C
Operating Temperature Range
LM567H
−55˚C to +125˚C
LM567CH, LM567CM, LM567CN
0˚C to +70˚C
Soldering Information
Dual-In-Line Package
Soldering (10 sec.)
260˚C
Small Outline Package
Vapor Phase (60 sec.)
215˚C
Infrared (15 sec.)
220˚C
See AN-450 “Surface Mounting Methods and Their Effect
on Product Reliability” for other methods of soldering
surface mount devices.
Electrical Characteristics
AC Test Circuit, T
A = 25˚C, V
+ =5V
Parameters
Conditions
LM567
LM567C/LM567CM
Units
Min
Typ
Max
Min
Typ
Max
Power Supply Voltage Range
4.75
5.0
9.0
4.75
5.0
9.0
V
Power Supply Current Quiescent
R
L = 20k
6
8
7
10
mA
Power Supply Current Activated
R
L = 20k
11
13
12
15
mA
Input Resistance
18
20
15
20
k
Smallest Detectable Input Voltage
I
L = 100 mA, fi =fo
20
25
20
25
mVrms
Largest No Output Input Voltage
I
C = 100 mA, fi =fo
10
15
10
15
mVrms
Largest Simultaneous Outband Signal to
Inband Signal Ratio
66
dB
Minimum Input Signal to Wideband
Noise Ratio
B
n = 140 kHz
−6
−6
dB
Largest Detection Bandwidth
12
14
16
10
14
18
% of f
o
Largest Detection Bandwidth Skew
1
2
2
3
% of f
o
Largest Detection Bandwidth Variation
with Temperature
±0.1
±0.1
%/˚C
Largest Detection Bandwidth Variation
with Supply Voltage
4.75–6.75V
±1
±2
±1
±5%V
Highest Center Frequency
100
500
100
500
kHz
Center Frequency Stability (4.75–5.75V)
0 < T
A < 70
−55 < T
A < +125
35 ± 60
35 ± 140
35 ± 60
35 ± 140
ppm/˚C
ppm/˚C
Center Frequency Shift with Supply
Voltage
4.75V–6.75V
4.75V–9V
0.5
1.0
2.0
0.4
2.0
2.0
%/V
%/V
Fastest ON-OFF Cycling Rate
f
o/20
f
o/20
Output Leakage Current
V
8 = 15V
0.01
25
0.01
25
µA
Output Saturation Voltage
e
i = 25 mV, I8 =30mA
e
i = 25 mV, I8 = 100 mA
0.2
0.6
0.4
1.0
0.2
0.6
0.4
1.0
V
Output Fall Time
30
30
ns
Output Rise Time
150
150
ns
Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is
functional, but do not guarantee specific performance limits. Electrical Characteristics state DC and AC electrical specifications under particular test conditions which
guarantee specific performance limits. This assumes that the device is within the Operating Ratings. Specifications are not guaranteed for parameters where no limit
is given, however, the typical value is a good indication of device performance.
Note 2: The maximum junction temperature of the LM567 and LM567C is 150˚C. For operating at elevated temperatures, devices in the TO-5 package must be
derated based on a thermal resistance of 150˚C/W, junction to ambient or 45˚C/W, junction to case. For the DIP the device must be derated based on a thermal
resistance of 110˚C/W, junction to ambient. For the Small Outline package, the device must be derated based on a thermal resistance of 160˚C/W, junction to
ambient.
Note 3: Refer to RETS567X drawing for specifications of military LM567H version.
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