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FS150R17N3E4 датащи(PDF) 2 Page - Inchange Semiconductor Company Limited

номер детали FS150R17N3E4
подробное описание детали  IGBT Module
PDF  6 Pages
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производитель  ISC [Inchange Semiconductor Company Limited]
домашняя страница  http://www.iscsemi.cn
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FS150R17N3E4 датащи(HTML) 2 Page - Inchange Semiconductor Company Limited

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ISGM2016
eq FS150R17N3E4
IGBT Module
www.iscsemi.com
2
ELECTRICAL CHARACTERISTICS(TC=25℃ UNLESS OTHERWISE SPECIFIED)
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNIT
VCES
Collector-Emitter
Breakdown
Voltage
VGE=0; IC= 1mA
1700
--
--
V
VGE(TH)
Gate-Emitter Threshold Voltage
VGE= VCE; IC= 6mA
5.2
5.8
6.4
V
VCE(sat)
Collector-Emitter Saturation Voltage I
C
= 150A; VCE= 15V,
TC=25℃
--
1.95
2.30
V
VCE(sat)
Collector-Emitter Saturation Voltage I
C
= 150A; VCE= 15V,
TC=125℃
--
2.35
--
V
VCE(sat)
Collector-Emitter Saturation Voltage I
C
= 150A; VCE= 15V,
TC=150℃
--
2.45
--
V
ICES
Zero Gate Voltage Collector Current VCE=1700V; VGE=0
--
--
1
mA
IGES
Gate-Emitter Leakage Current
VGE=±20V; VCE=0
--
--
±
100
nA
Cies
Input Capacitance
VGS = 0V,
VCS = 25V,
f = 1MHz
--
1.35
--
nF
Cres
Reverse Transfer Capacitance
--
0.44
--
QG
Gate Charge
VGE= +15V/-15V
--
1.70
--
uC
RG
Internal Gate Resistor
f = 1 MHz
--
5.0
--
Ω
td(on)
Turn-on Delay Time
VCC=900V,
IC=150A
VGE=±15V
RGon=0.62Ω
RGoff =0.62Ω
TJ=25℃
--
0.20
--
us
TJ=125℃
0.22
TJ=150℃
--
0.23
--
tr
Turn-on Rise Time
TJ=25℃
--
0.03
--
TJ=125℃
0.04
TJ=150℃
--
0.05
--
TJ=25℃
0.51
td(off)
Turn-off Delay Time
TJ=125℃
--
0.61
--
TJ=150℃
--
0.64
--
TJ=25℃
--
0.29
--
tf
Turn-off Fall Time
TJ=125℃
--
0.52
--
TJ=150℃
--
0.60
--



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