CES2321 datasheet(1/4 Pages) CET

номер детали	CES2321

подробное описание детали	P-Channel Enhancement Mode Field Effect Transistor

PDF	4 Pages

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производитель	CET [Chino-Excel Technology]

домашняя страница	http://www.cetsemi.com

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P-Channel Enhancement Mode Field Effect Transistor

CES2321

FEATURES

-20V, -3.8A, RDS(ON) = 55mΩ @VGS = -4.5V.

RDS(ON) = 80mΩ @VGS = -2.5V.

High dense cell design for extremely low RDS(ON).

Rugged and reliable.

SOT-23 package.

ABSOLUTE MAXIMUM RATINGS T

A = 25 C unless otherwise noted

Parameter

Symbol

Limit

Units

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

Drain Current-Pulsed a

Maximum Power Dissipation

VDS

VGS

ID

PD

IDM

-20

1.25

-15.2

-3.8

±12

V

W

A

V

1

S

G

D

G

D

S

SOT-23

Lead free product is acquired.

2005.June

http://www.cetsemi.com

Operating and Store Temperature Range

TJ,Tstg

-55 to 150

C

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient b

Parameter

Symbol

Limit

Units

C/W

100

R

θJA

Аналогичный номер детали - CES2321

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