Parameter

Symbol

Min

Units

Off Characteristics

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate Body Leakage Current, Forward

Forwand Transconductance

Gate Threshold Voltage

Static Drain-Source

On-Resistance

10.5

2

4

-100

100

25

m

Ω

V

nA

nA

µ

A

V

S

4 - 183

Gate Body Leakage Current, Reverse

Input Capacitance

Reverse Transfer Capacitance

Output Capacitance

Turn-On Delay Time

Turn-Off Fall Time

Turn-Off Delay Time

Turn-On Rise Time

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Drain-Source Diode Characteristics and Maximun Ratings

Drain-Source Diode Forward Current

Test Condition

Typ

Max

55

f = 1.0 MHz

2690

798

113

37

18

67

16

75

45

120

40

60

16

21

80

62

1.3

30

pF

pF

pF

ns

ns

ns

ns

nC

nC

nC

A

V

8.8

4

CEP9060R/CEB9060R

CEF9060R

Notes :

a.Repetitive Rating : Pulse width limited by maximum junction temperature

b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.

c.Guaranteed by design, not subject to production testing.

d.L = 260

e.Limited only by maximum temperature allowed .

f .Pulse width limited by safe operating area .