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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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DSS10-01AS датащи(PDF) 1 Page - Inchange Semiconductor Company Limited |
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DSS10-01AS датащи(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  Schottky Barrier Rectifier DSS10-01AS www.iscsemi.com 2023-10-08 1 FEATURES ·Multi-layer Metal -Silicon Potential Structure ·Low Leakage Current ·High Current Capability, High Efficiency ·High Junction Temperature Capability MECHANICAL CHARACTERISTICS ·Low Voltage High Frequency Switching Power Supply ·Low Voltage High Frequency Invers Circuit ·Low Voltage Continued Circuit and Protection Circuit ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM VRMS VR Peak Repetitive Reverse Voltage RMS Voltage DC Blocking Voltage 100 V IF(AV) Average Rectified Forward Current 10 A IFSM Nonrepetitive Peak Surge Current 1200 A PD Total Dissipation @TC=25℃ 90 W TJ Junction Temperature -55~175 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.7 ℃ /W |
Аналогичный номер детали - DSS10-01AS |
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Аналогичное описание - DSS10-01AS |
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ссылки URL |
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