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CSD18540Q5B датащи(PDF) 2 Page - Inchange Semiconductor Company Limited

номер детали CSD18540Q5B
подробное описание детали  N-Channel MOSFET Transistor
PDF  3 Pages
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производитель  ISC [Inchange Semiconductor Company Limited]
домашняя страница  http://www.iscsemi.cn
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CSD18540Q5B датащи(HTML) 2 Page - Inchange Semiconductor Company Limited

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ISF1039
eq CSD18540Q5B
N-Channel MOSFET Transistor
www.iscsemi.com
2
ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNIT
V(BR)DSS
Drain-Source Breakdown Voltage
VGS= 0; ID= 0.25mA
60
--
--
V
IDSS
Zero Gate Voltage Drain Current
VDS= 48V; VGS= 0
--
--
1
uA
IGSS
Gate-Body Leakage Current
VGS= ±20V;VDS= 0
--
--
±
100
nA
VGS(th)
Gate Threshold Voltage
VDS= VGS; ID=0.25mA
1.5
1.9
2.3
V
RDS(on)
Drain-Source On-Resistance
VGS= 4.5V; ID= 28A
2.6
3.3
mΩ
RDS(on)
Drain-Source On-Resistance
VGS= 10V; ID=28A
1.8
2.2
mΩ
gfs
Transconductance
VDS= 6V; ID=28A
116
s
Ciss
Input Capacitance
VGS = 0V,
VDS = 30V,
f =1.0MHz
--
3250
--
pF
Coss
Output Capacitance
--
622
--
Crss
Reverse Transfer Capacitance
--
15
--
Qg
Total Gate Charge
VDS = 30V,
ID =28A,
--
41
--
nC
Qgs
Gate-Source Charge
--
8.8
--
Qgd
Gate-Drain Charge
--
6.7
--
td(on)
Turn-on Delay Time
VDD = 30V,
ID = 28A,
RG = 0Ω,
VGS = 10V
--
6
--
ns
tr
Turn-on Rise Time
--
9
--
td(off)
Turn-off Delay Time
--
20
--
tf
Turn-off Fall Time
--
3
--
Drain - Source Body Diode Characteristics
VSD
Diode Forward Voltage
ISD=28A; VGS= 0V
--
0.8
1
V
trr
Reverse Recovery Time
VDD = 30V,IF =28A,
diF/dt =300A /μs
--
82
--
ns
Qrr
Reverse Recovery Charge
--
145
--
uC



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