1999 Apr 27

2

Philips Semiconductors

Product specification

NPN general purpose transistor

ED1502

FEATURES

• Low current (max. 25 mA)

• Low voltage (max. 20 V)

• High gain.

APPLICATIONS

• General purpose switching and amplification.

DESCRIPTION

NPN transistor in a plastic TO-92; SOT54 package.

PINNING

PIN

DESCRIPTION

1

emitter

2

base

3

collector

Fig.1

Simplified outline (TO-92; SOT54)

and symbol.

3

2

MAM182

3

2

1

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

Note

1. Refer to TO-92; SOT54 standard mounting conditions.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

collector-base voltage

open emitter

−

40

V

collector-emitter voltage

open base

−

20

V

emitter-base voltage

open collector

−

4V

collector current (DC)

−

25

mA

peak collector current

−

25

mA

peak base current

−

25

mA

total power dissipation

−

500

mW

storage temperature

−65

+150

°C

junction temperature

−

150

°C

operating ambient temperature

−65

+150

°C