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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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CGY2105ATS датащи(PDF) 9 Page - NXP Semiconductors |
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CGY2105ATS датащи(HTML) 9 Page - NXP Semiconductors |
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9 / 16 page  1999 Dec 23 9 Philips Semiconductors Preliminary specification High dynamic range dual LNA MMIC CGY2105ATS handbook, halfpage FCA104 0.0 −10.0 −5.0 −15.0 −20.0 −25.0 1.00 1.50 f (GHz) s12 (dB) 2.00 2.50 Fig.9 Reverse transmission coefficient s12 as a function of the frequency. Vsupply = 5 V; Vneg = −5V. handbook, halfpage FCA105 0.0 −10.0 −5.0 −15.0 −20.0 −25.0 1.00 1.50 f (GHz) s22 (dB) 2.00 2.50 Fig.10 Output reflection coefficient s22 as a function of the frequency. Vsupply = 5 V; Vneg = −5V. handbook, halfpage FCA106 0.0 −10.0 −20.0 −30.0 1.00 1.50 f (GHz) ISOi (dB) 2.00 2.50 Fig.11 Isolation between RF inputs as a function of the frequency. Vsupply = 5 V; Vneg = −5V. handbook, halfpage FCA107 20.0 10.0 0.0 −10.0 −20.0 −10.0 Pi (dBm) Po (dBm) 10.0 0.0 Fig.12 RF output power as a function of the RF input power. Vsupply = 5 V; Vneg = −5V. |
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