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LD7530 датащи(PDF) 10 Page - Leadtrend Technology |
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LD7530 датащи(HTML) 10 Page - Leadtrend Technology |
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10 / 19 page ![]() LD7530/LD7530A 10 Leadtrend Technology Corporation LD7530&LD7530A-DS-04 December 2007 Fig. 15 A 200nS leading-edge blanking (LEB) time is included in the input of CS pin to prevent the false-trigger from the current spike. In the low power application, if the total pulse width of the turn-on spikes is less than 200nS and the negative spike on the CS pin doesn’t exceed -0.3V, it could eliminated the R-C filter (as shown in the figure16). However, the total pulse width of the turn-on spike is decided by the output power, circuit design and PCB layout. It is strongly recommended to adopt a smaller R-C filter (as shown in figure 17) for higher power application to avoid the CS pin being damaged by the negative turn-on spike. Output Stage and Maximum Duty-Cycle An output stage of a CMOS buffer, with typical 300mA driving capability, is incorporated to drive a power MOSFET directly. And the maximum duty-cycle of LD7530/LD7530A is limited to 75% to avoid the transformer saturation. Voltage Feedback Loop The voltage feedback signal is provided from the TL431 at the secondary side through the photo-coupler to the COMP pin of the LD7530/LD7530A. Similar to UC3842, the LD7530/LD7530A would carry 2 diodes voltage offset at the stage to feed the voltage divider at the ratio of 1/3, that is, ) 2 ( 3 1 ) ( F COMP PWM V V V COMPARATOR − × = − A pull-high resistor is embedded internally and can be eliminated externally. Fig. 16 Fig. 17 Oscillator and Switching Frequency The switching frequency of LD7530/LD7530A is fixed as 65 KHz internally to provide the optimized operations by considering the EMI performance, thermal treatment, component sizes and transformer design. |
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