1

BFR96

MOTOROLA RF DEVICE DATA

The RF Line

NPN Silicon

High-Frequency Transistor

The BFR96 transistor uses the same state–of–the–art microwave transistor

chip which features fine–line geometry, ion–implanted arsenic emitters and gold

top metallization. This transistor is intended for low–to–medium power amplifiers

requiring high gain, low noise figure, and low intermodulation distortion. The

BFR96 is particularly suitable for broadband MATV/CATV amplifiers.

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector–Emitter Voltage

VCEO

15

Vdc

Collector–Base Voltage

VCBO

20

Vdc

Emitter–Base Voltage

VEBO

3.0

Vdc

Collector Current — Continuous

IC

100

mAdc

Total Device Dissipation @ TC = 100°C (1)

Derate above TC = 100°C

PD

0.5

10

Watts

mW/

°C

Storage Temperature

Tstg

– 65 to +150

°C

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage

(IC = 1.0 mAdc, IB = 0)

V(BR)CEO

15

—

—

Vdc

Collector–Base Breakdown Voltage

(IC = 100 µAdc, IE = 0)

V(BR)CBO

20

—

—

Vdc

Emitter–Base Breakdown Voltage

(IE = 100 µAdc, IC = 0)

V(BR)EBO

3.0

—

—

Vdc

Collector Cutoff Current

(VCB = 10 Vdc, IE = 0)

ICBO

—

—

100

nAdc

ON CHARACTERISTICS

DC Current Gain

(IC = 50 mAdc, VCE = 10 Vdc)

hFE

30

—

200

—

DYNAMIC CHARACTERISTICS

Current–Gain — Bandwidth Product

(IC = 50 mAdc, VCE = 10 Vdc, f = 0.5 GHz)

fT

—

4.5

—

GHz

Collector–Base Capacitance

(VCB = 10 Vdc, Emitter Guarded)

Ccb

—

1.2

1.5

pF

NOTE:

(continued)

1. Case temperature measured on collector lead immediately adjacent to body of package.

Order this document

by BFR96/D

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

BFR96

fT = 4.5 GHz @ 50 mA

HIGH–FREQUENCY

TRANSISTOR

NPN SILICON

CASE 317A–01, STYLE 2

© Motorola, Inc. 1994