SY semiconductors

Shenzhen SY Semiconductors Co.，LTD.

EB SERIES TRANSISTORS

EB203D

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FEATURES：①HIGH VOLTAGE CAPABILITY ②HIGH SPEED SWITCHING ③WIDE SOA

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APPLICATION：①FLUORESCENT LAMP ②ELECTRONIC BALLAST

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Absolute Maximum Ratings (Tc=25℃)

TO-92 NPN

PARAMETER

SYMBOL

VALUE

UN I T

Collector–Base Voltage

VCBO

600

V

Collector–Emitter Voltage

VCEO

400

V

Emitter –Base Voltage

VEBO

9

V

Collector Current

IC

1.2

A

Total Power Dissipation

PC

13

W

Junction Temperature

Tj

150

℃

Storage Temperature

Tstg

-65-150

℃

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Electronic Characteristics (Tc=25℃)

CHARACTERISTICS

SYMBOL

TEST CONDITION

MIN

MAX UN I T

Collector–Base Cutoff Current

ICBO

VCB=600v

100

µ

A

Collector–Emitter Cutoff Current

ICEO

VCE=400v

250

µ

A

Collector–Emitter Voltage

VCEO

IC=10mA IB=0

400

V

Emitter –Base Voltage

VEBO

IE=1mA IC=0

9

V

IC=0.5A IB=0.1A

0.5

V

Collector–Emitter Saturation

Voltage

Vcesat

IC=1A IB=0.5A

0.6

V

Base–Emitter Saturation Voltage

Vbesat

IC=0.5A IB=0.1A

1.2

V

VCE=5v IC=1mA

7

VCE=10v IC=0.1A

10

40

DC Current Gain

HFE

VCE=5v IC=1.2A

5

Storage Time

Ts

1.5

3.5

µ

S

Falling Time

Tf

VCC=5V

IC=0.25A

0.8

µ

S

Diode Forward Voltage

Vf

IF=1.0A

2.0

V

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CLASSIFICATION OF HFE AND TS

HFE

10-15

15-20

20-25

25-30

TS

1.5-2.0

2.0-2.5

2.5-3.0

3.0-3.5

SY semiconductors

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