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BZA109TS датащи(PDF) 3 Page - NXP Semiconductors

номер детали BZA109TS
подробное описание детали  9-fold ESD Transient Suppressor
PDF  12 Pages
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производитель  PHILIPS [NXP Semiconductors]
домашняя страница  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BZA109TS датащи(HTML) 3 Page - NXP Semiconductors

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1997 Sep 08
3
Philips Semiconductors
Preliminary specification
9-fold ESD Transient Suppressor
BZA109TS
LIMITING VALUES (per diode)
In accordance with the Absolute Maximum Rating System (IEC 134).
THERMAL CHARACTERISTICS
Note to the Limiting values and Thermal characteristics
1. Current is flowing from input to corresponding output.
2. One or more diodes loaded.
ELECTRICAL CHARACTERISTICS (per diode)
Tj =25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
IZ
reverse current
DC; Tamb =25 °C
20
mA
IF
forward current
DC; Tamb =25 °C
100
mA
IFT
feed-through current
DC; Tamb =25 °C; note 1
100
mA
IFSM
peak forward current
tp = 1 ms; square wave
4.5
A
IZSM
peak reverse current
tp = 1 ms; square wave
2.5
A
Ptot
total power dissipation
Tamb =25 °C; note 2
0.95
W
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−65
+150
°C
SYMBOL
PARAMETER
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient; note 2
135
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VZ
reverse voltage
IZ = 250 µA
6.4
6.8
7.2
V
VF
forward voltage
IF = 100 mA
−−
1.1
V
VZSM
reverse surge voltage
tp = 1 ms; IZSM = 2.5 A
−−
10
V
IH
input high current
VIN = 5.25 V
−−
0.5
µA
RZ
zener impedance
IZ = 250 µA
−−
100
SZ
temperature coefficient of VZ
3
mV/K
CD
input diode capacitance
f = 1 MHz; VR =0
−−
200
pF
f = 1 MHz; VR = 5.25 V
−−
100
pF



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