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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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SY100E212JC датащи(PDF) 3 Page - Micrel Semiconductor |
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SY100E212JC датащи(HTML) 3 Page - Micrel Semiconductor |
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3 / 4 page  3 SY10E212 SY100E212 Micrel, Inc. M9999-032206 hbwhelp@micrel.com or (408) 955-1690 TA = 0 °CTA = +25°CTA = +85°C Symbol Parameter Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Unit Condition IIH Input HIGH Current —— 150 —— 150 —— 150 µA — IEE Power Supply Current mA — 10E — 80 96 — 80 96 — 80 96 100E — 80 96 — 80 96 — 92 110 TA = 0 °CTA = +25°CTA = +85°C Symbol Parameter Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Unit Condition tPD Propagation Delay to Output ps — CLK 575 800 1025 575 800 1025 575 800 1025 MR 575 800 1025 575 800 1025 575 800 1025 CLK to S-OUT 575 800 1025 575 800 1025 575 800 1025 tS Set-up Time ps — D 175 25 — 175 25 — 175 25 — SHIFT 150 –50 — 150 –50 — 150 –50 — LOAD 225 50 — 225 50 — 225 50 — S-IN 150 –50 — 150 –50 — 150 –50 — tH Hold Time ps — D 250 25 — 250 25 — 250 25 — SHIFT 300 100 — 300 100 — 300 100 — LOAD 225 0 — 225 0 — 225 0 — S-IN 300 100 — 300 100 — 300 100 — tRR Reset Recovery 600 350 — 600 350 — 600 350 — ps — tskew Within-Device Skew — 100 —— 100 —— 100 — ps 1 tskew Within-Gate Skew — 50 —— 50 —— 50 — ps 2 tr Rise/Fall Times 275 425 650 275 425 650 275 425 650 ps — tf 20% to 80% DC ELECTRICAL CHARACTERISTICS VEE = VEE (Min.) to VEE (Max.); VCC = VCCO = GND TRUTH TABLE LOAD SHIFT MR Mode L L L Load H L L Hold X H L Shift X X H Reset AC ELECTRICAL CHARACTERISTICS VEE = VEE (Min.) to VEE (Max.); VCC = VCCO = GND Notes: 1. Within-device skew is defined as identical transitions on similar paths through a device. 2. Within-gate skew is defined as the difference in delays between various outputs of a gate when driven from the same input. |
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