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BYW29F датащи(PDF) 1 Page - NXP Semiconductors |
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BYW29F датащи(HTML) 1 Page - NXP Semiconductors |
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1 / 6 page ![]() Philips Semiconductors Product specification Rectifier diodes BYW29F series ultrafast GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated high efficiency SYMBOL PARAMETER MAX. MAX. MAX. UNIT rectifier diodes in full pack, plastic envelopes, featuring low forward BYW29F- 100 150 200 voltage drop, ultra-fast recovery V RRM Repetitive peak reverse 100 150 200 V times and soft recovery voltage characteristic. They are intended for V F Forward voltage 0.895 0.895 0.895 V use in switched mode power supplies I F(AV) Forward current 8 8 8 A and high frequency circuits in general t rr Reverse recovery time 25 25 25 ns where low conduction and switching losses are essential. PINNING - SOD100 PIN CONFIGURATION SYMBOL PIN DESCRIPTION 1 cathode 2 anode case isolated LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT -100 -150 -200 V RRM Repetitive peak reverse voltage - 100 150 200 V V RWM Crest working reverse voltage - 100 150 200 V V R Continuous reverse voltage 1 - 100 150 200 V I F(AV) Average forward current 2 square wave; δ = 0.5; - 8 A T hs ≤ 106 ˚C sinusoidal; a = 1.57; - 7.3 A T hs ≤ 109 ˚C I F(RMS) RMS forward current - 11.3 A I FRM Repetitive peak forward current t = 25 µs; δ = 0.5; - 16 A T hs ≤ 109 ˚C I FSM Non-repetitive peak forward t = 10 ms - 80 A current t = 8.3 ms - 88 A sinusoidal; with reapplied V RWM(max) I 2t I 2t for fusing t = 10 ms - 32 A 2s T stg Storage temperature -40 150 ˚C T j Operating junction temperature - 150 ˚C 1 2 case k a 1 T hs ≤ 141˚C for thermal stability. 2 Neglecting switching and reverse current losses October 1994 1 Rev 1.100 |
Аналогичный номер детали - BYW29F |
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Аналогичное описание - BYW29F |
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