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BYW28 датащи(PDF) 2 Page - NXP Semiconductors

номер детали BYW28
подробное описание детали  Ultra fast low-loss controlled avalanche rectifier
PDF  12 Pages
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производитель  PHILIPS [NXP Semiconductors]
домашняя страница  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BYW28 датащи(HTML) 2 Page - NXP Semiconductors

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1997 Nov 26
2
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifier
BYW28 series
FEATURES
• Glass passivated
• High maximum operating
temperature
• Low leakage current
• Excellent stability
• Guaranteed avalanche energy
absorption capability.
DESCRIPTION
Rugged glass SOD115 package,
using a high temperature alloyed
construction.
The package is hermetically sealed
and fatigue free as coefficients of
expansion of all used parts are
matched.
Fig.1 Simplified outline (SOD115) and symbol.
handbook, halfpage
ka
MAM384
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VRRM
repetitive peak reverse voltage
BYW28-500
500
V
BYW28-600
600
V
VR
continuous reverse voltage
BYW28-500
500
V
BYW28-600
600
V
IF(AV)
average forward current
Ttp =85 °C; lead length = 10 mm;
see Fig.2;
averaged over any 20 ms period;
see also Fig.6
4A
Tamb =60 °C; printed-circuit board
mounting (see Fig.11); see Fig.3;
averaged over any 20 ms period;
see also Fig.6
1.7
A
IFRM
repetitive peak forward current
Ttp =85 °C; see Fig.4
46
A
Tamb =60 °C; see Fig.5
21
A
IFSM
non-repetitive peak forward current
t = 10 ms half sine wave;
Tj =Tj max prior to surge;
VR =VRRMmax
170
A
ERSM
non-repetitive peak reverse
avalanche energy
L = 120 mH; Tj =Tj max prior to
surge; inductive load switched off
20
mJ
Tstg
storage temperature
−65
+175
°C
Tj
junction temperature
see Fig.7
−65
+175
°C



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