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BYV99 датащи(PDF) 2 Page - NXP Semiconductors |
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BYV99 датащи(HTML) 2 Page - NXP Semiconductors |
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2 / 8 page ![]() 1996 Feb 19 2 Philips Semiconductors Product specification Ultra fast low-loss controlled avalanche rectifier BYV99 FEATURES • Glass passivated • Low leakage current • Excellent stability • Guaranteed avalanche energy absorption capability • Available in ammo-pack. DESCRIPTION Rugged glass SOD57 package, using a high temperature alloyed construction. This package is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched. Fig.1 Simplified outline (SOD57) and symbol. 2/3 page (Datasheet) MAM047 ka LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VRRM repetitive peak reverse voltage − 600 V VR continuous reverse voltage − 600 V IF(AV) average forward current Ttp =50 °C; lead length = 10 mm see Fig. 2; averaged over any 20 ms period; see also Fig. 6 − 1.00 A Tamb =60 °C; PCB mounting (see Fig.10); see Fig. 3; averaged over any 20 ms period; see also Fig. 6 − 0.55 A IFRM repetitive peak forward current Ttp =50 °C; see Fig. 4 − 9A Tamb =60 °C; see Fig. 5 − 5A IFSM non-repetitive peak forward current t = 10 ms half sine wave; Tj =Tj max prior to surge; VR =VRRMmax − 20 A ERSM non-repetitive peak reverse avalanche energy L = 120 mH; Tj =Tj max prior to surge; inductive load switched off − 10 mJ Tstg storage temperature −65 +175 °C Tj junction temperature −65 +150 °C |
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