NVMFS2D3P04M8L datasheet(2/3 Pages) ISC

номер детали	NVMFS2D3P04M8L

подробное описание детали	isc P-Channel MOSFET Transistor

PDF	3 Pages

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производитель	ISC [Inchange Semiconductor Company Limited]

домашняя страница	http://www.iscsemi.cn

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isc P-Channel MOSFET Transistor

NVMFS2D3P04M8L

www.iscsemi.com

2023-9-8

ELECTRICAL CHARACTERISTICS (TC=25℃)

SYMBOL

PARAMETER

CONDITIONS

MIN

TYPE

MAX

UNIT

V(BR)DSS

Drain-Source Breakdown Voltage

VGS=0; ID=-0.5mA

-40

VGS(TH)

Gate Threshold Voltage

VDS= VGS; ID= -2.7mA

-0.7

-2.4

RDS(ON)

Drain-Source On-stage Resistance

VGS=-10V; ID=-30A

1.6

2.2

m

RDS(ON)

Drain-Source On-stage Resistance

VGS=-4.5V; ID=-10A

2.1

3.3

m

IGSS

Gate Source Leakage Current

VGS=±20V;VDS=0

100

IDSS

Zero Gate Voltage Drain Current

VDS=-40V; VGS=0

-1.0

Ciss

Input Capacitance

VGS = 0V,

VDS = -20V,

f = 1.0MHz

5985

Coss

Output Capacitance

4228

Crss

Reverse Transfer Capacitance

Total Gate Charge

VDD = -20V,

ID = -50A,

VGS = -10V

13.9

Qgs

Gate-Source Charge

26.2

Qgd

Gate-Drain Charge

17.8

td(on)

Turn-on Delay Time

VGS = −4.5 V,

VDS = −20 V,

ID = −50 A,

RG = 2.5Ω

16.3

Turn-on Rise Time

57.4

td(off)

Turn-off Delay Time

508

Turn-off Fall Time

373

Drain - Source Body Diode Characteristics

VSD

Diode Forward Voltage

VGS=0V,IS=-15A

-0.72

-1.2

trr

Reverse Recovery Time

VGS =0V,

dls/dt=100 A/s,

Is = −50 A

159

Qrr

Reverse Recovery Charge

536

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