AT45DB321D_07 datasheet(27/55 Pages) ATMEL

27 / 55 page

3597H–DFLASH–02/07

AT45DB321D [Preliminary]

14.2

Operation Mode Summary

The commands described previously can be grouped into four different categories to better

describe which commands can be executed at what times.

Group A commands consist of:

Main Memory Page Read

Continuous Array Read

Read Sector Protection Register

Read Sector Lockdown Register

Read Security Register

Group B commands consist of:

Page Erase

Block Erase

Sector Erase

Chip Erase

Main Memory Page to Buffer 1 (or 2) Transfer

Main Memory Page to Buffer 1 (or 2) Compare

Buffer 1 (or 2) to Main Memory Page Program with Built-in Erase

Buffer 1 (or 2) to Main Memory Page Program without Built-in Erase

Main Memory Page Program through Buffer 1 (or 2)

10. Auto Page Rewrite

Group C commands consist of:

Buffer 1 (or 2) Read

Buffer 1 (or 2) Write

Status Register Read

Manufacturer and Device ID Read

Group D commands consist of:

Erase Sector Protection Register

Program Sector Protection Register

Sector Lockdown

Program Security Register

If a Group A command is in progress (not fully completed), then another command in Group A,

B, C, or D should not be started. However, during the internally self-timed portion of Group B

commands, any command in Group C can be executed. The Group B commands using buffer 1

should use Group C commands using buffer 2 and vice versa. Finally, during the internally self-

timed portion of a Group D command, only the Status Register Read command should be

executed.

AT45DB321D датащи(PDF) 27 Page - ATMEL Corporation