Philips Semiconductors

Product specification

Dual rectifier diodes

BYV74W series

ultrafast

FEATURES

SYMBOL

QUICK REFERENCE DATA

• Low forward volt drop

V

• Fast switching

• Soft recovery characteristic

V

• High thermal cycling performance

• Low thermal resistance

I

t

GENERAL DESCRIPTION

PINNING

SOT429 (TO247)

Dual, common cathode, ultra-fast,

PIN

DESCRIPTION

epitaxial rectifier diodes intended

for use as output rectifiers in high

1

anode 1

frequency switched mode power

supplies.

2

cathode

The BYV74W series is supplied in

3

anode 2

the conventional leaded SOT429

(TO247) package.

tab

cathode

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134).

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

BYV74W

-300

-400

-500

V

RRM

Peak repetitive reverse voltage

-

300

400

500

V

V

RWM

Crest working reverse voltage

-

300

400

500

V

V

R

Continuous reverse voltage

T

-

300

400

500

V

I

O(AV)

Average rectified output current square wave;

δ = 0.5;

-

30

A

(both diodes conducting)

1

T

I

FRM

Repetitive peak forward current t = 25

µs; δ = 0.5;

-

30

A

per diode

T

I

FSM

Non-repetitive peak forward

t = 10 ms

-

150

A

current per diode.

t = 8.3 ms

-

160

A

sinusoidal; with reapplied

V

RRM(max)

T

stg

Storage temperature

-40

150

˚C

T

j

Operating junction temperature

-

150

˚C

THERMAL RESISTANCES

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

R

th j-hs

Thermal resistance junction to

per diode

-

-

2.4

K/W

heatsink

both diodes conducting

-

-

1.4

K/W

R

th j-a

Thermal resistance junction to

in free air.

-

45

-

K/W

ambient

k

a1

a2

13

2

2

3

1

1 Neglecting switching and reverse current losses.

April 1998

1

Rev 1.000