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BYV34 датащи(PDF) 1 Page - NXP Semiconductors |
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BYV34 датащи(HTML) 1 Page - NXP Semiconductors |
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1 / 5 page ![]() Philips Semiconductors Product specification Dual rectifier diodes BYV34 series ultrafast FEATURES SYMBOL QUICK REFERENCE DATA • Low forward volt drop V R = 300 V/ 400 V/ 500 V • Fast switching • Soft recovery characteristic V F ≤ 1.05 V • High thermal cycling performance • Low thermal resistance I O(AV) = 20 A t rr ≤ 60 ns GENERAL DESCRIPTION PINNING SOT78 (TO220AB) Dual, common cathode, ultra-fast, PIN DESCRIPTION epitaxial rectifier diodes intended for use as output rectifiers in high 1 anode 1 frequency switched mode power supplies. 2 cathode The BYV34 series is supplied in the 3 anode 2 conventional leaded SOT78 (TO220AB) package. tab cathode LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT BYV34 -300 -400 -500 V RRM Peak repetitive reverse voltage - 300 400 500 V V RWM Crest working reverse voltage - 300 400 500 V V R Continuous reverse voltage T mb ≤ 138˚C - 300 400 500 V I O(AV) Average rectified output current square wave; δ = 0.5; - 20 A (both diodes conducting) 1 T mb ≤ 115 ˚C I FRM Repetitive peak forward current t = 25 µs; δ = 0.5; - 20 A per diode T mb ≤ 115 ˚C I FSM Non-repetitive peak forward t = 10 ms - 120 A current per diode. t = 8.3 ms - 132 A sinusoidal; with reapplied V RRM(max) T stg Storage temperature -40 150 ˚C T j Operating junction temperature - 150 ˚C THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT R th j-hs Thermal resistance junction to per diode - - 2.4 K/W heatsink both diodes conducting - - 1.6 K/W R th j-a Thermal resistance junction to in free air. - 60 - K/W ambient k a1 a2 13 2 12 3 tab 1 Neglecting switching and reverse current losses October 1998 1 Rev 1.400 |
Аналогичный номер детали - BYV34 |
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Аналогичное описание - BYV34 |
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