7.4 Thermal Information

THERMAL METRIC(1)

PGA855

UNIT

RGT (VQFN)

16 PINS

RθJA

Junction-to-ambient thermal resistance

47.3

°C/W

RθJC(top)

Junction-to-case (top) thermal resistance

53.6

°C/W

RθJB

Junction-to-board thermal resistance

22.0

°C/W

ψJT

Junction-to-top characterization parameter

1.4

°C/W

ψJB

Junction-to-board characterization parameter

22.0

°C/W

RθJC(bot)

Junction-to-case (bottom) thermal resistance

7.8

°C/W

(1)

For information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.

7.5 Electrical Characteristics

at TA = 25 °C, VS = VSOUT = ±15 V, VICM = VOCM is at mid-supply, RL = 10 kΩ, and G = 1 V/V (unless otherwise noted)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

INPUT

VOS

Differential offset voltage (input

referred)

G = 1 to 16

±70

±350

µV

G < 1

±70/G

±350/G

Differential offset voltage drift (input

referred)

G = 1 to 16, TA = –40°C to +125°C

±0.3

±1.0

µV/°C

G < 1, TA = –40°C to +125°C

±0.3/G

±1.0/G

PSRR

Power-supply rejection ratio

±4 V ≤ VS ≤ ±18 V, RTI

G = 0.125

102

108

dB

G = 0.25

108

114

dB

G = 0.5

114

120

G = 1

120

126

G = 2

120

126

G = 4

120

132

G = 8

120

136

G = 16

120

140

zid

Differential impedance

100 || 1

GΩ || pF

zic

Common-mode impedance

100 || 7

GΩ || pF

VI

Input voltage

VS = ±4 V to ±18 V, TA = –40°C to +125°C

(VS–) + 2.5

(VS+) – 2.5

V

CMRR

Common-mode rejection ratio

At dc to 60 Hz,

VICM = ± 10 V,

TA = –40°C to +125°C,

RTI

G = 0.125

64

82

dB

G = 0.25

70

88

G = 0.5

76

94

G = 1

82

100

G = 2

88

106

G = 4

94

112

G = 8

100

118

G = 16

106

124

BIAS CURRENT

IB

Input bias current

0.5

1.8

nA

TA = –40°C to +125°C

1

Input bias current drift

TA = –40°C to +125°C

10

pA/°C

IOS

Input offset current

0.5

1

nA

TA = –40°C to +125°C

1

Input offset current drift

TA = –40°C to +125°C

10

pA/°C

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PGA855

SBOSAE0B – APRIL 2023 – REVISED SEPTEMBER 2023

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