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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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AD8350 датащи(PDF) 2 Page - Analog Devices |
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AD8350 датащи(HTML) 2 Page - Analog Devices |
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2 / 16 page  REV. A –2– AD8350–SPECIFICATIONS (@ 25 C, VS = 5 V, G = 15 dB, unless otherwise noted. All specifications refer to differential inputs and differential outputs unless noted.) Parameter Conditions Min Typ Max Unit DYNAMIC PERFORMANCE –3 dB Bandwidth VS = 5 V, VOUT = 1 V p-p 0.9 GHz VS = 10 V, VOUT = 1 V p-p 1.1 GHz Bandwidth for 0.1 dB Flatness VS = 5 V, VOUT = 1 V p-p 90 MHz VS = 10 V, VOUT = 1 V p-p 90 MHz Slew Rate VOUT = 1 V p-p 2000 V/ µs Settling Time 0.1%, VOUT = 1 V p-p 10 ns Gain (S21) 1 VS = 5 V, f = 50 MHz 14 15 16 dB Gain Supply Sensitivity VS = 5 V to 10 V, f = 50 MHz 0.003 dB/V Gain Temperature Sensitivity TMIN to TMAX –0.002 dB/ °C Isolation (S12) 1 f = 50 MHz –18 dB NOISE/HARMONIC PERFORMANCE 50 MHz Signal Second Harmonic VS = 5 V, VOUT = 1 V p-p –66 dBc VS = 10 V, VOUT = 1 V p-p –67 dBc Third Harmonic VS = 5 V, VOUT = 1 V p-p –65 dBc VS = 10 V, VOUT = 1 V p-p –70 dBc Output Second Order Intercept 2 VS = 5 V 58 dBm VS = 10 V 58 dBm Output Third Order Intercept 2 VS = 5 V 28 dBm VS = 10 V 29 dBm 250 MHz Signal Second Harmonic VS = 5 V, VOUT = 1 V p-p –48 dBc VS = 10 V, VOUT = 1 V p-p –49 dBc Third Harmonic VS = 5 V, VOUT = 1 V p-p –52 dBc VS = 10 V, VOUT = 1 V p-p –61 dBc Output Second Order Intercept 2 VS = 5 V 39 dBm VS = 10 V 40 dBm Output Third Order Intercept 2 VS = 5 V 24 dBm VS = 10 V 28 dBm 1 dB Compression Point (RTI) 2 VS = 5 V 2 dBm VS = 10 V 5 dBm Voltage Noise (RTI) f = 150 MHz 1.7 nV/ √Hz Noise Figure f = 150 MHz 6.8 dB INPUT/OUTPUT CHARACTERISTICS Differential Offset Voltage (RTI) VOUT+ – VOUT– ±1mV Differential Offset Drift TMIN to TMAX 0.02 mV/ °C Input Bias Current 15 µA Input Resistance Real 200 Ω CMRR f = 50 MHz –67 dB Output Resistance Real 200 Ω POWER SUPPLY Operating Range 411.0 V Quiescent Current Powered Up, VS = 5 V 25 28 32 mA Powered Down, VS = 5 V 3 3.8 5.5 mA Powered Up, VS = 10 V 27 30 34 mA Powered Down, VS = 10 V 3 4 6.5 mA Power-Up/Down Switching 15 ns Power Supply Rejection Ratio f = 50 MHz, VS ∆ = 1 V p-p –58 dB OPERATING TEMPERATURE RANGE –40 +85 °C NOTES 1See Tables II–III for complete list of S-Parameters. 2Re: 50 Ω. Specifications subject to change without notice. |
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