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BYR29F датащи(PDF) 2 Page - NXP Semiconductors

номер детали BYR29F
подробное описание детали  Rectifier diodes ultrafast
PDF  6 Pages
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производитель  PHILIPS [NXP Semiconductors]
домашняя страница  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BYR29F датащи(HTML) 2 Page - NXP Semiconductors

  BYR29F Datasheet HTML 1Page - NXP Semiconductors BYR29F Datasheet HTML 2Page - NXP Semiconductors BYR29F Datasheet HTML 3Page - NXP Semiconductors BYR29F Datasheet HTML 4Page - NXP Semiconductors BYR29F Datasheet HTML 5Page - NXP Semiconductors BYR29F Datasheet HTML 6Page - NXP Semiconductors  
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Philips Semiconductors
Product specification
Rectifier diodes
BYR29F series
ultrafast
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs = 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
isol
Repetitive peak voltage from
R.H.
≤ 65% ; clean and dustfree
-
1500
V
both terminals to external
heatsink
C
isol
Capacitance from cathode to
f = 1 MHz
-
12
-
pF
external heatsink
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
R
th j-hs
Thermal resistance junction to
with heatsink compound
-
-
5.5
K/W
heatsink
without heatsink compound
-
-
7.2
K/W
R
th j-a
Thermal resistance junction to
in free air.
-
55
-
K/W
ambient
ELECTRICAL CHARACTERISTICS
T
j = 25 ˚C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
F
Forward voltage
I
F = 8 A; Tj = 150˚C
-
1.07
1.50
V
I
F = 20 A
-
1.75
1.95
V
I
R
Reverse current
V
R = VRRM
-
1.0
10
µA
V
R = VRRM; Tj = 100 ˚C
-
0.1
0.2
mA
Q
s
Reverse recovery charge
I
F = 2 A to VR ≥ 30 V;
-
150
200
nC
dI
F/dt = 20 A/µs
t
rr
Reverse recovery time
I
F = 1 A to VR ≥ 30 V;
-
60
75
ns
dI
F/dt = 100 A/µs
I
rrm
Peak reverse recovery current
I
F = 10 A to VR ≥ 30 V;
-
-
6
A
dI
F/dt = 50 A/µs; Tj = 100 ˚C
V
fr
Forward recovery voltage
I
F = 10 A; dIF/dt = 10 A/µs
-
5.0
-
V
September 1998
2
Rev 1.400



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