AD1990 datasheet(3/16 Pages) AD

3 / 16 page

AD1990

Rev. 0 | Page 3 of 16

SPECIFICATIONS

Test conditions, unless otherwise specified.

Table 1.

Parameter

Ratings

SUPPLY VOLTAGES

AVDD

5 V

DVDD

5 V

PVDD

12 V

AMBIENT TEMPERATURE

25°C

LOAD IMPEDANCE

6 Ω

CLOCK FREQUENCY

12.288 MHz

PGA GAIN

0 dB

MEASUREMENT BANDWIDTH

20 Hz to 20 kHz

Table 2.

Parameter

Min

Typ

Max

Unit

Test Conditions/Comments

RDS-ON

Per High-Side Transistor

260

355

mΩ

T = 25°C

Per Low-Side Transistor

210

265

mΩ

T = 25°C

MAXIMUM CURRENT THROUGH OUTx

Peak

THERMAL WARNING ACTIVE

135

°C

Die temperature

THERMAL SHUTDOWN ACTIVE

150

°C

Die temperature

RESTORE TEMPERATURE AFTER THERMAL SHUTDOWN

120

°C

Die temperature

Table 3. Performance Specifications

Parameter

Typ

Unit

Test Conditions/Comments

TOTAL HARMONIC DISTORTION AND NOISE (THD + N)

0.003

PGA = 0 dB, PO = 1 W, 1 kHz

0.006

PGA = 6 dB, PO = 1 W, 1 kHz

0.01

PGA = 12 dB, PO = 1 W, 1 kHz

0.02

PGA = 18 dB, PO = 1 W, 1 kHz

SIGNAL-TO-NOISE RATIO (SNR)

102

1 kHz, A-weighted, 0 dB referred to 1% THD + N output

DYNAMIC RANGE (DNR)

102

1 kHz, A-weighted, −60 dB referred to 1% THD + N output

CROSSTALK (LEFT-TO-RIGHT OR RIGHT-TO-LEFT)

−100

PGA = 0 dB, PO = 5 W, 1 kHz

Table 4. DC Specifications

Parameter

Typ

Unit

Test Conditions/Comments

INPUT IMPEDANCE

kΩ

AINL, AINR input pins

OUTPUT DC OFFSET

±4

Independent of PGA setting

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