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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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BYG80D датащи(PDF) 3 Page - NXP Semiconductors |
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BYG80D датащи(HTML) 3 Page - NXP Semiconductors |
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3 / 20 page  1997 Nov 25 3 Philips Semiconductors Product specification Ultra fast low-loss controlled avalanche rectifiers BYG80 series ELECTRICAL CHARACTERISTICS Tj =25 °C unless otherwise specified. IF(AV) average forward current Tamb =60 °C; epoxy PCB mounting (see Fig.27); see Figs 5, 6 and 7 averaged over any 20 ms period; see also Figs 17, 18 and 19 BYG80A to D − 0.95 A BYG80F; BYG80G − 0.85 A BYG80J − 0.65 A IFRM repetitive peak forward current Ttp = 100 °C; see Figs 8, 9 and 10 BYG80A to D − 21 A BYG80F; BYG80G − 21 A BYG80J − 18 A IFRM repetitive peak forward current Tamb =60 °C; AL2O3 PCB mounting; see Figs 11, 12 and 13 BYG80A to D − 11 A BYG80F; BYG80G − 11 A BYG80J − 9A IFRM repetitive peak forward current Tamb =60 °C; epoxy PCB mounting; see Figs 14, 15 and 16 BYG80A to D − 8A BYG80F; BYG80G − 8A BYG80J − 6A IFSM non-repetitive peak forward current t = 8.3 ms half sine wave; Tj =25 °C prior to surge; VR =VRRMmax BYG80A to D − 36 A BYG80F; BYG80G; BYG80J − 32 A ERSM non-repetitive peak reverse avalanche energy L = 120 mH; Tj =Tj max prior to surge; inductive load switched off − 10 mJ Tstg storage temperature −65 +175 °C Tj junction temperature see Fig.20 −65 +175 °C SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VF forward voltage IF = 1 A; Tj =Tj max; see Figs 21, 22 and 23 BYG80A to D −− 0.67 V BYG80F; BYG80G −− 0.73 V BYG80J −− 0.96 V VF forward voltage IF = 1 A; see Figs 21, 22 and 23 BYG80A to D −− 0.93 V BYG80F; BYG80G −− 0.98 V BYG80J −− 1.20 V SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT |
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