BYD33 datasheet(3/12 Pages) PHILIPS

3 / 12 page

1996 Sep 18

Philips Semiconductors

Product speciﬁcation

Fast soft-recovery

controlled avalanche rectiﬁers

BYD33 series

ELECTRICAL CHARACTERISTICS

Tj =25 °C unless otherwise speciﬁed.

IFRM

repetitive peak forward current

Tamb =65 °C; see Figs 8 and 9

BYD33D to M

−

BYD33U and V

−

IFSM

non-repetitive peak forward current

t = 10 ms half sine wave;

Tj =Tj max prior to surge;

VR =VRRMmax

−

ERSM

non-repetitive peak reverse

avalanche energy

L = 120 mH; Tj =Tj max prior to

surge; inductive load switched off

BYD33D to J

−

BYD33K to V

−

7mJ

Tstg

storage temperature

−65

+175

°C

junction temperature

see Figs 12 and 13

−65

+175

°C

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

forward voltage

IF = 1 A; Tj =Tj max;

see Figs 14 and 15

−−

1.1

IF =1A;

see Figs 14 and 15

−−

1.3

V(BR)R

reverse avalanche breakdown

voltage

IR = 0.1 mA

BYD33D

300

−−

BYD33G

500

−−

BYD33J

700

−−

BYD33K

900

−−

BYD33M

1100

−−

BYD33U

1300

−−

BYD33V

1500

−−

reverse current

VR =VRRMmax;

see Fig.16

−−

µA

VR =VRRMmax;

Tj = 165 °C; see Fig.16

−−

100

µA

trr

reverse recovery time

when switched from

IF = 0.5 A to IR =1A;

measured at IR = 0.25 A

see Fig.21

BYD33D to J

−−

250

BYD33K and M

−−

300

BYD33U and V

−−

500

diode capacitance

f = 1 MHz; VR =0V;

see Figs 17 and 18

−

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

BYD33 датащи(PDF) 3 Page - NXP Semiconductors

BYD33 датащи(HTML) 3 Page - NXP Semiconductors

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12

датащи скачать

ссылки URL