NTJD2152P datasheet(3/6 Pages) ONSEMI

номер детали	NTJD2152P

подробное описание детали	Trench Small Signal MOSFET

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NTJD2152P

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TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)

1.4

−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

0.6

0.2

Figure 1. On−Region Characteristics

0.4

1.4

1.2

2.4

0.6

0.2

0.8

Figure 2. Transfer Characteristics

−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)

0.1

0.4

0.3

0.2

Figure 3. On−Resistance vs. Drain Current and

Temperature

−ID, DRAIN CURRENT (AMPS)

Figure 4. On−Resistance vs. Drain Current and

Temperature

−50

−25

1.4

1.2

0.8

0.6

125

100

Figure 5. On−Resistance Variation with

Temperature

TJ, JUNCTION TEMPERATURE (°C)

TJ = 25°C

0.5

0.2

0.6

TJ = −55°C

TJ = 125°C

150

ID = −0.7 A

VGS = −4.5 V

and −2.5 V

25°C

1.6

−1.2 V

1.4

Figure 6. Capacitance Variation

−1.4 V

−1.6 V

−1.8 V

−2 V

VDS ≥ −10 V

0.4

VGS = −2.2 V

VGS = −4.5 V to −2.6 V

0.4

0.8

1.2

0.8

0.4

1.6

TJ = 125°C

1.2

0.8

VGS = −4.5 V

TJ = −55°C

TJ = 25°C

0.1

0.4

0.3

0.2

−ID, DRAIN CURRENT (AMPS)

0.5

0.2

0.6

TJ = 125°C

1.4

0.4

1.2

0.8

VGS = −2.5 V

TJ = −55°C

TJ = 25°C

VGS = 0 V

−4

−8

300

180

120

GATE−TO−SOURCE OR DRAIN−TO−SOURCE

VOLTAGE (VOLTS)

TJ = 25°C

Coss

Ciss

Crss

240

−60

−2

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