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BY448 датащи(PDF) 2 Page - NXP Semiconductors |
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BY448 датащи(HTML) 2 Page - NXP Semiconductors |
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2 / 7 page ![]() 1996 Sep 26 2 Philips Semiconductors Product specification Damper diode BY448 FEATURES • Glass passivated • High maximum operating temperature • Low leakage current • Excellent stability • Available in ammo-pack. APPLICATIONS • Damper diode in high frequency horizontal deflection circuits up to 16 kHz. DESCRIPTION Rugged glass package, using a high temperature alloyed construction. This package is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched. Fig.1 Simplified outline (SOD57) and symbol. 2/3 page (Datasheet) MAM047 ka LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). ELECTRICAL CHARACTERISTICS Tj =25 °C; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VRSM non-repetitive peak reverse voltage − 1650 V VRRM repetitive peak reverse voltage − 1650 V VR continuous reverse voltage − 1500 V IFWM working peak forward current Tamb =50 °C; PCB mounting (see Fig 4); see Fig.2 − 4A IFRM repetitive peak forward current − 8A IFSM non-repetitive peak forward current t = 10 ms half sinewave; Tj =Tj max prior to surge; VR =VRRMmax − 30 A Tstg storage temperature −65 +175 °C Tj junction temperature −65 +150 °C SYMBOL PARAMETER CONDITIONS MAX. UNIT VF forward voltage IF = 3 A; Tj =Tj max; see Fig.3 1.45 V IF = 3 A; see Fig.3 1.60 V IR reverse current VR =VRmax; Tj = 150 °C 150 µA trr reverse recovery time when switched from IF = 0.5 A to IR =1A; measured at IR = 0.25 A; see Fig.6 1 µs tfr forward recovery time when switched to IF = 4 A in 50 ns; Tj =Tj max; see Fig.7 1 µs |
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