Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BUT211

STATIC CHARACTERISTICS

T

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

I

CES

Collector cut-off current

1

V

-

-

1.0

mA

I

CES

V

-

-

2.0

mA

T

I

EBO

Emitter cut-off current

V

-

-

10.0

mA

V

CEOsust

Collector-emitter sustaining voltage

I

400

-

-

V

L = 25 mH

V

CEsat

Collector-emitter saturation voltage

I

-

0.8

2.0

V

V

BEsat

Base-emitter saturation voltage

I

-

-

1.3

V

h

FE

DC current gain

I

13

21

30

h

FE

I

7.5

11

-

h

FE

Gain bands

2

1I

13

-

20

(Acceptance limits)

2

18

-

25

323

-

30

DYNAMIC CHARACTERISTICS

T

SYMBOL

PARAMETER

CONDITIONS

TYP.

MAX.

UNIT

Switching times resistive load

I

t

s

Turn-off storage time

1.5

2.0

µs

t

f

Turn-off fall time

0.5

0.8

µs

Switching times inductive load

I

-V

t

s

Turn-off storage time

1.0

1.2

µs

t

f

Turn-off fall time

60

100

ns

I

-V

t

s

Turn-off storage time

1.1

1.4

µs

t

f

Turn-off fall time

120

250

ns

1 Measured with half sine-wave voltage (curve tracer).

2 Gain Banding.

Product is divided into 3 gain bands for matching purposes.

The gain band is printed on the device.

All devices within a device rail will be from the same gain band.

However, a box may contain rails from more than one band.

Band quantities are shown on the box label.

It is not possible to order specific gain bands.

March 1996

2

Rev 1.100