UT134F datasheet(2/5 Pages) UTC

2 / 5 page

UTC UT134F/G

TRIAC

UTC UNISONIC TECHNOLOGIES CO., LTD.

QW-R401-008,B

*Although not recommended, off-state voltages up to 800V may be applied without damage, but the traic may switch

to the on-state. The rate of rise of current should not exceed 3A/

µs.

THERMAL RESISTANCES

PARAMETER

SYMBOL

MIN

TYP

MAX

UNIT

Thermal resistance Junction to mounting base

Full cycle

Half cycle

Rth j-mb

3.0

3.7

K/W

Thermal resistance Junction to ambient

(In free air)

Rth j-a

100

K/W

STATIC CHARACTERISTICS (Tj=25°C, unless otherwise stated)

MAX

PARAMETER

SYMBOL

CONDITIONS

MIN

TYP

UT134F UT134G

UNIT

Gate trigger current

IGT

VD = 12 V; IT = 0.1 A

T2+ G+

T2+ G-

T2- G-

T2- G+

100

Latching current

VD = 12 V; IGT = 0.1 A

T2+ G+

T2+ G-

T2- G-

T2- G+

Holding current

VD = 12 V; IGT = 0.1 A

On-state voltage

IT = 5 A

1.4

1.7

VD = 12 V; IT = 0.1 A

0.7

1.5

Gate trigger voltage

VGT

VD = 400V ; IT = 0.1 A; Tj

=125°C

0.25

0.4

Off-state leakage current

VD = VDRM(max) ; Tj = 125 °C

0.1

0.5

DYNAMIC CHARACTERISTICS (Tj=25°C, unless otherwise stated)

MIN

PARAMETER

SYMBOL

CONDITIONS

UT134F UT134G

TYP

MAX UNIT

Critical rate of rise of

Off-state voltage

dVD /dt

VDM = 67% VDRM(max) ; Tj =125°C;

exponential waveform; gate open

circuit

200

250

V/µs

Critical rate of change of

Commutating voltage

dVcom/dt

VDM=400V;Tj=95°C;IT(RMS)=4A;

dIcom /dt =1.8A/ms; gate open

circuit

V/µs

Gate controlled turn-on

time

tgt

ITM = 6 A; VD= VDRM(max) ;

IG=0.1A; dIG/dt=5A/µs

µs

UT134F датащи(PDF) 2 Page - Unisonic Technologies

UT134F датащи(HTML) 2 Page - Unisonic Technologies

Html Pages

1 2 3 4 5

датащи скачать

ссылки URL