MMBT5089 datasheet(2/6 Pages) UTC

2 / 6 page

UTC MMBT5088 / MMBT5089

NPN EPITAXIAL SILICON TRANSISTOR

UTC UNISONIC TECHNOLOGIES CO., LTD. 2

QW-R206-033,A

ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

MAX

UNIT

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

(note)

MMBT5088

MMBT5089

V(BR)CEO IC=1.0mA, IB=0

Collector-Base Breakdown Voltage

MMBT5088

MMBT5089

V(BR)CBO IC=100µA, IE=0

Collector Cut-Off Current

MMBT5088

MMBT5089

ICBO

VCB=20V, IE=0

VCB=15V, IE=0

Emitter Cutoff Current

IEBO

VEB=3.0V, IC=0

VEB=4.5V, IC=0

100

ON CHARACTERISTICS

DC Current Gain

hFE

VCE=5.0V, IC=100µA

MMBT5088

MMBT5089

VCE=5.0V, IC=1.0mA

MMBT5088

MMBT5089

VCE=5.0V, IC=10mA (note)

MMBT5088

MMBT5089

300

400

350

450

300

400

900

1200

Collector-Emitter Saturation Voltage

VCE(sat) IC=10mA, IB=1.0mA

0.5

Base-Emitter On Voltage

VBE(on)

IC=10mA, VCE=5.0V

0.8

SMALL SIGNAL CHARACTERISTICS

Current Gain-Bandwidth Product

VCE=5.0mA, Ic=500µA, f=20MHz

MHz

Collector-Base Capacitance

Ccb

VCB=5.0V, IE=0, f=100kHz

Emitter-Base Capacitance

Ceb

VEB=0.5V, Ic=0, f=100kHz

Small-Signal Current Gain

MMBT5088

MMBT5089

hFE

VCE=5.0V, Ic=1.0mA, f=1.0kHz

350

450

1400

1800

Noise Figure

MMBT5088

MMBT5089

VCE=5.0V, Ic=100µA, Rs=10kΩ,

f=10kHz to 15.7kHz

3.0

2.0

Note: Pulse Test: Pulse Width

≤300µs, Duty Cycle≤2.0%.

MMBT5089 датащи(PDF) 2 Page - Unisonic Technologies

MMBT5089 датащи(HTML) 2 Page - Unisonic Technologies

Html Pages

1 2 3 4 5 6

датащи скачать

ссылки URL