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BD136 датащи(PDF) 2 Page - Unisonic Technologies

номер детали BD136
подробное описание детали  PNP SILICON TRANSISTOR
PDF  2 Pages
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производитель  UTC [Unisonic Technologies]
домашняя страница  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

BD136 датащи(HTML) 2 Page - Unisonic Technologies

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UTC BD136/138/140
PNP EPITAXIAL SILICON TRANSISTOR
UTC
UNISONIC TECHNOLOGIES CO. LTD
2
QW-R204-013,B
ELECTRICAL CHARACTERISTICS(Tc=25°C,unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
Collector-Emitter Sustaining Voltage
BD136
BD138
BD140
VCEO(sus)* IC =-30 mA, IB=0
-45
-60
-80
V
Collector Cut-off Current
ICBO
VCB =-30 V, IE=0
VCB =-30 V, IE=0, Tc = 125°C
-0.1
-10
µA
Emitter Cut- off Current
IEBO
VEB = -5 V, IC=0
-10
µA
hFE1
hFE2
DC Current Gain
hFE3
VCE=-2V, IC =-5 mA,
VCE=-2V, IC =-0.5A ,
VCE=-2V, IC =-150 mA,
25
25
40
250
Collector-Emitter Saturation Voltage
VCE(sat)*
IC =-0.5 A, IB = -0.05 A
-0.5
V
Base-Emitter Voltage
VBE*
IC =-0.5 A, VCE =-2 V
-1
V
* Pulsed: Pulse duration ≦ 300 µs, duty cycle 1.5 %
CLASSIFICATION OF hFE3
RANK
-6
-10
-16
RANGE
40~100
63~160
100~250
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.



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