DTA124E

PNP EPITAXIAL SILICON TRANSISTOR

UNISONIC TECHNOLOGIES CO., LTD

3

www.unisonic.com.tw

QW-R206-044,B

■

TYPICAL CHARACTERICS

25 ℃

100 ℃

-100

-50

-20

-10

-5

-2

-1

-500m

-200m

-100m

-20 0μ- 500μ

-2m

-5m

-10m -20m

-50m -100m

-1m

Ta= - 40 ℃

Vo=-0.3V

-100μ

Fig.1 Input voltage vs.output current

(ON characterristics)

1k

500

200

100

50

10

5

2

1

20

Vo=-5V

T a=100℃

-40 ℃

25℃

Output Current :Io(A)

Fig.3 DC current gain vs.output current

Output Current :Io(A)

-10m

-5m

-2m

-500μ

-200μ

-50μ

-20μ

-10μ

-0.5

-1.0

-1.5

-2.0

-2.5

-3.0

T a=100℃

-40 ℃

-2μ

-5μ

-100μ

-1m

Vcc=-5V

25℃

-1μ

0

Fig.2 Output current vs Input voltage

.(OFF characterristics)

-1

-500m

-200m

-100m

-50m

-20m

-10m

-5m

-2m

-1m

T a=100℃

-40℃

25℃

Fig.4Output voltage vs.output current

Output Current :Io(A)

-20 0μ -50 0μ

-2m

-5m

-10m -20m

-50m

-100m

-1m

-100μ

-2 00μ -500 μ

-2m

-5m

-10m -20m

-50m -100m

-1m

-100μ

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ex ceed, ev en m om entarily, rated v alues (such as m ax im um ratings, operating condition ranges, or

other param eters) listed in products specifications of any and all U T C products described or contained

herein. U T C products are not designed for use in life support appliances, dev ices or system s where

m alfunction of these products can be reasonably ex pected to result in personal injury. R eproduction in

whole or in part is prohibited without the prior written consent of the copyright owner. T he inform ation

presented in this docum ent does not form part of any quotation or contract, is believ ed to be accurate

and reliable and m ay be changed without notice.