Maximum rating

NAND256-M, NAND512-M, NAND01G-M

16/23

2

Maximum rating

Stressing the device above the rating listed in the Absolute Maximum Ratings table may

cause permanent damage to the device. These are stress ratings only and operation of the

device at these or any other conditions above those indicated in the Operating sections of

this specification is not implied. Exposure to Absolute Maximum Rating conditions for

extended periods may affect device reliability. Refer also to the STMicroelectronics SURE

Program and other relevant quality documents.

Table 5.

Absolute Maximum Ratings

Symbol

Parameter

Value

Unit

Min

Max

Ambient Operating Temperature

-30

85

°C

Temperature Under Bias

1.

TBD stands for To Be Defined.

TBD(1)

°C

Storage Temperature

-55

125

°C

(2)

2.

Minimum Voltage may undershoot to -2V for less than 20ns during transitions on input and I/O pins.

NAND Flash Input or Output

Voltage

1.8V device

-0.6

2.7

V

3V device

-0.6

4.6

V

LPSDRAM Input or Output

Voltage

1.8V device

-0.5

2.6

V

NAND Flash Supply Voltage

1.8V device

-0.6

2.7

V

3V device

-0.6

4.6

V

LPSDRAM Supply Voltage

1.8V device

-0.5

2.6

V

LPSDRAM Short

Circuit Output

Current

50

mA

LPSDRAM Power

Dissipation

PD

1.0

W