TIP42C-TN3-R datasheet(2/3 Pages) UTC

номер детали	TIP42C-TN3-R

подробное описание детали	PNP EPITAXIAL PLANAR TRANSISTOR

PDF	3 Pages

Scroll/Zoom	100%

производитель	UTC [Unisonic Technologies]

домашняя страница	http://www.utc-ic.com

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2 / 3 page

TIP42C

PNP PLANAR TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

QW-R203-007.B

ABSOLUTE MAXIMUM RATING

PARAMETER

SYMBOL

RATINGS

UNIT

Collector Base Voltage

VCBO

-100

Collector to Emitter Voltage

VCEO

-100

Emitter-Base Voltage

VEBO

-5

Collector Current (DC)

-6

Collector Current (Pulse)

-10

Base Current

-2

TO-220

Collector Dissipation (Tc=25℃)

TO-252

Junction Temperature

+150

℃

Storage Temperature

TSTG

-65 ~ +150

℃

Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ELECTRICAL CHARACTERISTICS (Tc=25℃)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX UNIT

Collector Emitter Sustaining Voltage (*)

BVCEO

IC=-30mA, IB=0

-100

Collector Cutoff Current

ICEO

VCE=-60V, IB=0

-0.7

Collector Cutoff Current

ICES

VCE=-100V, VEB=0

-400

µA

Emitter Cutoff Current

IEBO

VBE=-5V, IC=0

-1

Collector-Emitter Saturation Voltage (*)

VCE(SAT) IC=-6A, IB=-600mA

-1.5

Base-Emitter on Voltage (*)

VBE(ON)

IC=-6A, VCE=-4V

-2.0

DC Current Gain (*)

hFE

IC=-300mA, VCE=-4V

IC=-3A, VCE=-4V

Current Gain Bandwidth Product

VCE=-10V, IC=-500mA,

f=1MHz

MHz

* Pulse Test: PW≦300

µs, Duty Cycle≦2%

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