N5027L-R-TF3-E-T datasheet(3/4 Pages) UTC

номер детали	N5027L-R-TF3-E-T

подробное описание детали	HIGH VOLTAGE AND HIGH RELIABILITY NPN TRANSISTOR

PDF	4 Pages

Scroll/Zoom	100%

производитель	UTC [Unisonic Technologies]

домашняя страница	http://www.utc-ic.com

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3 / 4 page

N5027

NPN SILICON TRANSISTOR

UNISONIC TECHNOLOGIES CO., LTD

3 of 4

www.unisonic.com.tw

QW-R203-032,A

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TYPICAL CHARACTERISTICS

4.0

3.6

0.0

Static Characteristic

Collector Current vs. Collector-Emitter Voltage

1234567

3.2

2.8

2.4

2.0

1.6

1.2

0.8

0.4

IB=150 mA

IB=100 mA

IB=50mA

IB=10mA

1ms

100us

1000

100

0.01

0.1

DC Current Gain vs. Collector Current

VCE=5V

Saturation Voltage vs. Collector Current

Collector Current vs. Base-Emitter Voltage

Collector-Emitter Voltage, VCE (V)

Collector Current, IC (A)

Base-Emitter Voltage, VBE (V)

Collector Current, IC (A)

1ms

100us

0.1

0.01

0.1

4.0

3.5

1.0

0.5

0.0

0.2

0.4

0.6

0.8

1.0

1.2

3.0

2.5

2.0

1.5

0.0

VCE=5V

Ic=5IB

1ms

0.1

0.01

0.1

110

1E-s

100

1000

10000

100

0.1

0.01

IcMAX.(Continuous )

Vcc=400V

5.IB1= - 2.5.I B2=Ic

Collector-Emitter Voltage, VCE (V)

Switching Time

Time vs. Collector-Emitter Voltage

Safe Operating Area

Collector Current vs. Collector-Emitter Voltage

IcMAX.(Pulse)

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