поискавой системы для электроныых деталей
  Russian  ▼
ALLDATASHEETRU.COM

X  

Preview PDF HTML

2SB1202L-U-TM3-R датащи(PDF) 2 Page - Unisonic Technologies

номер детали 2SB1202L-U-TM3-R
подробное описание детали  HIGH CURRENT SWITCHING APPLICATION
PDF  5 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
производитель  UTC [Unisonic Technologies]
домашняя страница  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

2SB1202L-U-TM3-R датащи(HTML) 2 Page - Unisonic Technologies

  2SB1202L-U-TM3-R Datasheet HTML 1Page - Unisonic Technologies 2SB1202L-U-TM3-R Datasheet HTML 2Page - Unisonic Technologies 2SB1202L-U-TM3-R Datasheet HTML 3Page - Unisonic Technologies 2SB1202L-U-TM3-R Datasheet HTML 4Page - Unisonic Technologies 2SB1202L-U-TM3-R Datasheet HTML 5Page - Unisonic Technologies  
Zoom Inzoom in Zoom Outzoom out
 2 / 5 page
background image
2SB1202
PNP PLANAR TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
2 of 5
www.unisonic.com.tw
QW-R217-005.B
ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified )
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
-60
V
Collector-Emitter Voltage
VCEO
-50
V
Emitter-Base Voltage
VEBO
-6
V
Ta=25
°C
1
W
Collector Power Dissipation
Tc=25
°C
PC
15
W
DC
IC
-3
A
Collector Current
PULSE
ICP
-6
A
Junction Temperature
TJ
150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
C-B Breakdown Voltage
BVCBO
IC=-10µA, IE=0
-60
V
C-E Breakdown Voltage
BVCEO
IC=-1mA, RBE=∞
-50
V
E-B Breakdown Voltage
BVEBO
IE=-10µA, IC=0
-6
V
Collector Cutoff Current
ICBO
VCB=-40V,IE=0
-1
µA
Emitter Cutoff Current
IEBO
VEB=-4V,IC=0
-1
µA
C-E Saturation Voltage
VCE(SAT)
IC=-2A, IB=-100mA
-0.35
-0.7
V
B-E Saturation Voltage
VBE(SAT)
IC=-2A, IB=-100mA
-0.94
-1.2
V
hFE1
VCE=-2V, Ic=-100mA
100
560
DC Current Gain
hFE2
VCE=-2V, Ic=-3A
35
Gain-Bandwidth Product
fT
VCE=-10V, IC=-50mA
150
MHz
Output Capacitance
Cob
VCB=-10V, f=1MHz
39
pF
Turn-on Time
tON
See test circuit
70
ns
Storage Time
tSTG
See test circuit
450
ns
Fall Time
tF
See test circuit
35
ns
CLASSIFICATION OF hFE1
RANK
R
S
T
U
RANGE
100-200
140-280
200-400
280-560



Html Pages

1 2 3 4 5


датащи скачать

Go To PDF Page


ссылки URL



Вашему бизинису помогли Аллдатащит?  [ DONATE ] 

Что такое Аллдатащит   |   реклама   |   контакт   |   Конфиденциальность   |   Ссылка на техническое описание    |   обмен ссыками   |   поиск по производителю
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com