UTC2SC5889 NPN EPITAXIAL SILICON TRANSISTOR

1

QW-R216-005,A

DC/DC CONVERTER

APPLICATIONS

FEATURES

*Large current capacitance.

*Low collector-emitter saturation voltage.

*High-speed switching

*High allowable power dissipation.

APPLICATIONS

* relay drivers, lamp drivers, motor drivers, strobes.

TO -92S P

1

1.EMITTER 2.COLLECTOR 3.BASE

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

15

V

Collector-Emitter Voltage

10

V

Emitter-Base Voltage

7

V

Collector Current

Ic

5

A

Collector Current (Pulse)

Icp

9

A

Base Current

1

A

Collector Dissipation

Pc

0.55

W

Junction Temerature

Tj

150

°C

Storage Temprature

Tstg

-55 ~ +150

°C

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP MAX UNIT

Collector Base Breakdown Voltage

15

V

Collector Emitter Breakdown Voltage

10

V

Emitter Base Breakdown Voltage

7

V

Collector Cutoff Current

0.1

μ

A

Emitter Cutoff Current

0.1

μ

A

450

1200

DC Current Gain

200

120

180

mV

Collector-Emitter Saturation Voltage

230

350

mV

Base-Emitter Saturation Voltage

0.85

1.2

V

Gain Bandwidth Product

350

MHz

Output Capacitance

Cob

23

pF

Turn-ON Time

See specified Test Circuit

30

Storage Time

See specified Test Circuit

210

Fall Time

See specified Test Circuit

11

ns