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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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2SC5569 датащи(PDF) 1 Page - Unisonic Technologies |
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2SC5569 датащи(HTML) 1 Page - Unisonic Technologies |
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1 / 4 page  UTC 2SC5569 NPN EPITAXIAL SILICON TRANSISTOR UTC UNISONIC TECHNOLOGIES CO. LTD 1 QW-R208-031,A DC/DC CONVERTER APPLICATIONS FEATURES *High current capacitance. *Low collector-to-emitter saturation voltage. *High-speed switching. *High allowable power dissipation. *Complementary to 2SA2016. APPLICATIONS *Relay drivers, lamp drivers, motor drivers, strobes SOT-89 1 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS (Ta=25℃) PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 80 V Collector-Emitter Voltage VCEO 50 V Emitter-Base Voltage VEBO 6 V Collector Current Ic 7 A Collector Current (Pulse) Icp 10 A Base Current IB 1.2 A Collector Dissipation Tc=25 °C Pc 1.3* 3.5 W Junction Temperature Tj 150 °C Storage Temperature Tstg -55 ~ +150 °C * Mounted on ceramic board (250mm 2×0.8mm) ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Collector to Base Breakdown Voltage V(BR)CBO Ic=10μA,IE=0 80 V Collector to Emitter Breakdown Voltage V(BR)CEO Ic=1mA,RBE=∞ 50 V Emitter to Base Breakdown Voltage V(BR)EBO IE=10μA,IE=0 6 V Collector Cut-Off Current ICBO VCB=40V,IE=0 0.1 μ A Emitter Cut-Off Current IEBO VEB=4V,Ic=0 0.1 μ A DC Current Gain hFE VCE=2V,Ic=500mA 200 560 Ic=3.5A,IB=175mA 160 240 mV Collector to Emitter Saturation Voltage VCE(sat) Ic=2A,IB=40mA 110 170 mV Base to Emitter Saturation Voltage VBE(sat) Ic=2A,IB=40mA 0.83 1.2 V Gain Bandwidth Product fT VCE=10V,Ic=500mA 330 MHz Output Capacitance Cob VCB=10V, f=1MHz 28 pF Turn-On Time ton See specified Test Circuit 30 ns Storage Time tstg See specified Test Circuit 420 ns |
Аналогичный номер детали - 2SC5569 |
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Аналогичное описание - 2SC5569 |
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