DTC144T-AL3-R datasheet(2/3 Pages) UTC

номер детали	DTC144T-AL3-R

подробное описание детали	NPN DIGITAL TRANSISTOR (BUILT- IN BIAS RESISTORS)

PDF	3 Pages

Scroll/Zoom	100%

производитель	UTC [Unisonic Technologies]

домашняя страница	http://www.utc-ic.com

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DTC144T

NPN SILICON TRANSISTOR

UNISONIC TECHNOLOGIES CO., LTD

2 of 3

www.unisonic.com.tw

QW-R206-066,B

ABSOLUTE MAXIMUM RATINGS (Ta = 25℃)

PARAMETER

SYMBOL

RATING

UNIT

Collector-Base Voltage

VCBO

Collector-Emitter Voltage

VCEO

Emitter-Base Voltage

VEBO

Collector Current

100

SOT-523

150

Collector Power Dissipation

SOT-23/SOT-323

200

Junction Temperature

150

℃

Storage Temperature

TSTG

-55~+150

℃

Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ELECTRICAL CHARACTERISTICS (Ta= 25℃, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP MAX UNIT

Collector-Base Breakdown Voltage

BVCBO IC=50µA

Collector-Emitter Breakdown Voltage

BVCEO IC=1mA

Emitter-Base Breakdown Voltage

BVEBO IE=50µA

Collector Cutoff Current

ICBO

VCB=50V

0.5

µA

Emitter Cutoff Current

IEBO

VEB=4V

0.5

µA

Collector-Emitter Saturation Voltage

VCE(SAT) IC=5mA, IB=0.5mA

0.3

DC Current Gain

hFE

VCE=5V, IC=1mA

100

250

600

Input Resistance

32.9

61.1

kΩ

Transition Frequency

VCE=10V, IE=-5mA, f=100MHz*

250

MHz

* Transition frequency of the device

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